| PART |
Description |
Maker |
| CY14B108L-ZS45XI CY14B108L-ZS45XIT |
8-Mbit (1024 K 8/512 K 16) nvSRAM
|
Cypress
|
| CY14B108K-ZS25XI CY14B108K-ZS25XIT CY14B108K-ZS45X |
8 Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
| CY14B108K-ZS25XIT CY14B108K-ZS45XI CY14B108K-ZS45X |
8-Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock
8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: TSOP
|
CYPRESS SEMICONDUCTOR CORP
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| M36P0R9060N0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| LH543611 LH543621 |
512 x 36 x 2 / 1024 x 36 x 2 Synchronous Bidirectional FIFO
|
Sharp Electrionic Components
|
| IDT72221L15J IDT72221L15JI IDT72221L15PF IDT72221L |
CMOS SyncFIFOO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
|
IDT[Integrated Device Technology]
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| ATTINY10 |
8-bit Microcontroller with 512/1024 Bytes In-System Programmable Flash
|
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